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Other articles related with "silicon carbide"：
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108503 |
Hong Zhang(张鸿), Hong-Xia Guo(郭红霞), Zhi-Feng Lei(雷志锋), Chao Peng(彭超), Wu-Ying Ma(马武英), Di Wang(王迪), Chang-Hao Sun(孙常皓), Feng-Qi Zhang(张凤祁), Zhan-Gang Zhang(张战刚), Ye Yang(杨业), Wei Lv(吕伟), Zhong-Ming Wang(王忠明), Xiang-Li Zhong(钟向丽), and Xiao-Ping Ouyang(欧阳晓平) |
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Proton induced radiation effect of SiC MOSFET under different bias |
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Chin. Phys. B
2023 Vol.32 (10): 108503-108503
[Abstract]
(91)
[HTML 0 KB]
[PDF 1463 KB]
(21)
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98505 |
Jia-Hao Chen(陈嘉豪), Ying Wang(王颖), Xin-Xing Fei(费新星), Meng-Tian Bao(包梦恬), and Fei Cao(曹菲) |
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Novel layout design of 4H-SiC merged PiN Schottky diodes leading to improved surge robustness |
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Chin. Phys. B
2023 Vol.32 (9): 98505-098505
[Abstract]
(112)
[HTML 0 KB]
[PDF 1681 KB]
(38)
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96301 |
Fu Wang(王甫), Yandong Sun(孙彦东), Yu Zou(邹宇), Ben Xu(徐贲), and Baoqin Fu(付宝勤) |
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Unveiling phonon frequency-dependent mechanism of heat transport across stacking fault in silicon carbide |
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Chin. Phys. B
2023 Vol.32 (9): 96301-096301
[Abstract]
(104)
[HTML 1 KB]
[PDF 1276 KB]
(48)
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98101 |
Jin-Xin Liu(刘金鑫), Fang Peng(彭放), Guo-Long Ma(马国龙), Wen-Jia Liang(梁文嘉), Rui-Qi He(何瑞琦), Shi-Xue Guan(管诗雪), Yue Tang(唐越), and Xiao-Jun Xiang(向晓君) |
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High-pressure and high-temperature sintering of pure cubic silicon carbide: A study on stress-strain and densification |
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Chin. Phys. B
2023 Vol.32 (9): 98101-098101
[Abstract]
(114)
[HTML 1 KB]
[PDF 2357 KB]
(30)
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56102 |
Guang-Sheng Ning(宁广胜), Li-Min Zhang(张利民), Wei-Hua Zhong(钟巍华), Sheng-Hong Wang(王绳鸿), Xin-Yu Liu(刘心语), Ding-Ping Wang(汪定平), An-Ping He(何安平), Jian Liu(刘健), and Chang-Yi Zhang(张长义) |
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Application of silicon carbide temperature monitors in 49-2 swimming-pool test reactor |
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Chin. Phys. B
2023 Vol.32 (5): 56102-056102
[Abstract]
(193)
[HTML 1 KB]
[PDF 2103 KB]
(120)
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28504 |
Hong Zhang(张鸿), Hongxia Guo(郭红霞), Zhifeng Lei(雷志锋), Chao Peng(彭超), Zhangang Zhang(张战刚), Ziwen Chen(陈资文), Changhao Sun(孙常皓), Yujuan He(何玉娟), Fengqi Zhang(张凤祁), Xiaoyu Pan(潘霄宇), Xiangli Zhong(钟向丽), and Xiaoping Ouyang(欧阳晓平) |
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Experiment and simulation on degradation and burnout mechanisms of SiC MOSFET under heavy ion irradiation |
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Chin. Phys. B
2023 Vol.32 (2): 28504-028504
[Abstract]
(267)
[HTML 1 KB]
[PDF 1582 KB]
(105)
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98502 |
Xinxin Zuo(左欣欣), Jiang Lu(陆江), Xiaoli Tian(田晓丽), Yun Bai(白云), Guodong Cheng(成国栋), Hong Chen(陈宏), Yidan Tang(汤益丹), Chengyue Yang(杨成樾), and Xinyu Liu(刘新宇) |
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Improvement on short-circuit ability of SiC super-junction MOSFET with partially widened pillar structure |
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Chin. Phys. B
2022 Vol.31 (9): 98502-098502
[Abstract]
(303)
[HTML 0 KB]
[PDF 1544 KB]
(151)
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78501 |
Pei Shen(沈培), Ying Wang(王颖), and Fei Cao(曹菲) |
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A 4H-SiC trench MOSFET structure with wrap N-type pillar for low oxide field and enhanced switching performance |
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Chin. Phys. B
2022 Vol.31 (7): 78501-078501
[Abstract]
(389)
[HTML 1 KB]
[PDF 1551 KB]
(134)
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56108 |
Yuanchao Huang(黄渊超), Rong Wang(王蓉), Yiqiang Zhang(张懿强), Deren Yang(杨德仁), and Xiaodong Pi(皮孝东) |
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Assessing the effect of hydrogen on the electronic properties of 4H-SiC |
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Chin. Phys. B
2022 Vol.31 (5): 56108-056108
[Abstract]
(372)
[HTML 1 KB]
[PDF 1043 KB]
(163)
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14402 |
Jian Zhang(张健), Hao-Chun Zhang(张昊春), Zi-Liang Huang(黄子亮), Wen-Bo Sun(孙文博), and Yi-Yi Li(李依依) |
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Construction and mechanism analysis on nanoscale thermal cloak by in-situ annealing silicon carbide film |
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Chin. Phys. B
2022 Vol.31 (1): 14402-014402
[Abstract]
(476)
[HTML 1 KB]
[PDF 1808 KB]
(176)
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107801 |
Wan-Duo Ma(马婉铎), Ya-Lin Li(李亚林), Pei Gong(龚裴), Ya-Hui Jia(贾亚辉), and Xiao-Yong Fang(房晓勇) |
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Conductance and dielectric properties of hydrogen and hydroxyl passivated SiCNWs |
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Chin. Phys. B
2021 Vol.30 (10): 107801-107801
[Abstract]
(470)
[HTML 0 KB]
[PDF 1490 KB]
(47)
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67803 |
Ying-Ying Yang(杨莹莹), Pei Gong(龚裴), Wan-Duo Ma(马婉铎), Rui Hao(郝锐), and Xiao-Yong Fang(房晓勇) |
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Effects of substitution of group-V atoms for carbon or silicon atoms on optical properties of silicon carbide nanotubes |
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Chin. Phys. B
2021 Vol.30 (6): 67803-067803
[Abstract]
(483)
[HTML 0 KB]
[PDF 1287 KB]
(119)
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58502 |
Pei Shen(沈培), Ying Wang(王颖), Xing-Ji Li(李兴冀), Jian-Qun Yang(杨剑群), Cheng-Hao Yu(于成浩), and Fei Cao(曹菲) |
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Improved 4H-SiC UMOSFET with super-junction shield region |
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Chin. Phys. B
2021 Vol.30 (5): 58502-058502
[Abstract]
(544)
[HTML 1 KB]
[PDF 1030 KB]
(171)
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68504 |
Zheng-Xin Wen(温正欣), Feng Zhang(张峰), Zhan-Wei Shen(申占伟), Jun Chen(陈俊), Ya-Wei He(何亚伟), Guo-Guo Yan(闫果果), Xing-Fang Liu(刘兴昉), Wan-Shun Zhao(赵万顺), Lei Wang(王雷), Guo-Sheng Sun(孙国胜), Yi-Ping Zeng(曾一平) |
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Design and fabrication of 10-kV silicon-carbide p-channel IGBTs with hexagonal cells and step space modulated junction termination extension |
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Chin. Phys. B
2019 Vol.28 (6): 68504-068504
[Abstract]
(682)
[HTML 1 KB]
[PDF 1521 KB]
(264)
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108502 |
Xi Wang(王曦), Hong-Bin Pu(蒲红斌), Qing Liu(刘青), Li-Qi An(安丽琪) |
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Shortening turn-on delay of SiC light triggered thyristor by 7-shaped thin n-base doping profile |
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Chin. Phys. B
2018 Vol.27 (10): 108502-108502
[Abstract]
(667)
[HTML 1 KB]
[PDF 741 KB]
(150)
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87304 |
Xin Ye(叶鑫), Xiao-Chuan Xia(夏晓川), Hong-Wei Liang(梁红伟), Zhuo Li(李卓), He-Qiu Zhang(张贺秋), Guo-Tong Du(杜国同), Xing-Zhu Cui(崔兴柱), Xiao-Hua Liang(梁晓华) |
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Effect of Au/Ni/4H-SiC Schottky junction thermal stability on performance of alpha particle detection |
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Chin. Phys. B
2018 Vol.27 (8): 87304-087304
[Abstract]
(583)
[HTML 0 KB]
[PDF 735 KB]
(160)
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87102 |
Xue-Qian Zhong(仲雪倩), Jue Wang(王珏), Bao-Zhu Wang(王宝柱), Heng-Yu Wang(王珩宇), Qing Guo(郭清), Kuang Sheng(盛况) |
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Investigations on mesa width design for 4H-SiC trench super junction Schottky diodes |
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Chin. Phys. B
2018 Vol.27 (8): 87102-087102
[Abstract]
(827)
[HTML 0 KB]
[PDF 1573 KB]
(276)
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108505 |
Xi Wang(王曦), Hongbin Pu(蒲红斌), Qing Liu(刘青), Chunlan Chen(陈春兰), Zhiming Chen(陈治明) |
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Injection modulation of p+–n emitter junction in 4H–SiC light triggered thyristor by double-deck thin n-base |
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Chin. Phys. B
2017 Vol.26 (10): 108505-108505
[Abstract]
(633)
[HTML 0 KB]
[PDF 374 KB]
(270)
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37104 |
Wenbo Li(李文波), Ling Li(李玲), Fangfang Wang(王方方), Liu Zheng(郑柳), Jinghua Xia(夏经华), Fuwen Qin(秦福文), Xiaolin Wang(王晓琳), Yongping Li(李永平), Rui Liu(刘瑞), Dejun Wang(王德君), Yan Pan(潘艳), Fei Yang(杨霏) |
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Passivation effects of phosphorus on 4H-SiC (0001) Si dangling bonds: A first-principles study |
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Chin. Phys. B
2017 Vol.26 (3): 37104-037104
[Abstract]
(711)
[HTML 1 KB]
[PDF 1782 KB]
(590)
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87201 |
Xiao-Chuan Deng(邓小川), Xi-Xi Chen(陈茜茜), Cheng-Zhan Li(李诚瞻), Hua-Jun Shen(申华军), Jin-Ping Zhang(张金平) |
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Numerical and experimental study of the mesa configuration in high-voltage 4H-SiC PiN rectifiers |
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Chin. Phys. B
2016 Vol.25 (8): 87201-087201
[Abstract]
(638)
[HTML 1 KB]
[PDF 1372 KB]
(469)
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94213 |
Wang Wei-Jie (王卫杰), Zhao Zhen-Guo (赵振国), Zhao Yi (赵艺), Zhou Hai-Jing (周海京), Fu Ce-Ji (符策基) |
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Design and optimization of a SiC thermal emitter/absorber composed of periodic microstructures based on a non-linear method |
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Chin. Phys. B
2015 Vol.24 (9): 94213-094213
[Abstract]
(728)
[HTML 1 KB]
[PDF 615 KB]
(319)
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86501 |
Guo Yu (郭钰), Guo Li-Wei (郭丽伟), Lu Wei (芦伟), Huang Jiao (黄郊), Jia Yu-Ping (贾玉萍), Sun Wei (孙伟), Li Zhi-Lin (李治林), Wang Yi-Fei (王逸非) |
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Influence of defects in SiC (0001) on epitaxial graphene |
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Chin. Phys. B
2014 Vol.23 (8): 86501-086501
[Abstract]
(591)
[HTML 1 KB]
[PDF 4242 KB]
(358)
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77201 |
Chen Si-Zhe (陈思哲), Sheng Kuang (盛况) |
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Design consideration and fabrication of 1.2-kV 4H-SiC trenched-and-implanted vertical junction field-effect transistors |
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Chin. Phys. B
2014 Vol.23 (7): 77201-077201
[Abstract]
(607)
[HTML 1 KB]
[PDF 783 KB]
(489)
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57804 |
Yu Wei (于威), Wang Xin-Zhan (王新占), Dai Wan-Lei (戴万雷), Lu Wan-Bing (路万兵), Liu Yu-Mei (刘玉梅), Fu Guang-Sheng (傅广生) |
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Surface plasmon enhanced photoluminescence in amorphous silicon carbide films by adjusting Ag island film sizes |
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Chin. Phys. B
2013 Vol.22 (5): 57804-057804
[Abstract]
(733)
[HTML 1 KB]
[PDF 354 KB]
(726)
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17302 |
Deng Xiao-Chuan (邓小川), Sun He (孙鹤), Rao Cheng-Yuan (饶成元), Zhang Bo (张波) |
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High-power SiC MESFET using dual p-buffer layer for S-band power amplifier |
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Chin. Phys. B
2013 Vol.22 (1): 17302-017302
[Abstract]
(991)
[HTML 0 KB]
[PDF 407 KB]
(732)
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107802 |
Fu Guang-Sheng (傅广生), Wang Xin-Zhan (王新占), Lu Wan-Bing (路万兵), Dai Wan-Lei (戴万雷), Li Xing-Kuo (李兴阔), Yu Wei (于威) |
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Structural and band tail state photoluminescence properties of amorphous SiC films with different amounts of carbon |
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Chin. Phys. B
2012 Vol.21 (10): 107802-107802
[Abstract]
(1149)
[HTML 1 KB]
[PDF 320 KB]
(2020)
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97302 |
Zhang Xian-Jun (张现军), Yang Yin-Tang (杨银堂), Duan Bao-Xing (段宝兴), Chai Chang-Chun (柴常春), Song Kun (宋坤), Chen Bin (陈斌) |
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Drain-induced barrier lowering effect for short channel dual material gate 4H silicon carbide metal–semiconductor field-effect transistor |
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Chin. Phys. B
2012 Vol.21 (9): 97302-097302
[Abstract]
(1283)
[HTML 1 KB]
[PDF 227 KB]
(1733)
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17202 |
Song Kun(宋坤), Chai Chang-Chun(柴常春), Yang Yin-Tang(杨银堂), Chen Bin(陈斌), Zhang Xian-Jun(张现军), and Ma Zhen-Yang(马振洋) |
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Effects of gate-buffer combined with a p-type spacer structure on silicon carbide metal–semiconductor field-effect transistors |
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Chin. Phys. B
2012 Vol.21 (1): 17202-17202
[Abstract]
(1056)
[HTML 1 KB]
[PDF 454 KB]
(726)
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17201 |
Zhang Xian-Jun(张现军), Yang Yin-Tang(杨银堂), Duan Bao-Xing(段宝兴), Chen Bin(陈斌), Chai Chang-Chun(柴常春), and Song Kun(宋坤) |
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New 4H silicon carbide metal semiconductor field-effect transistor with a buffer layer between the gate and the channel layer |
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Chin. Phys. B
2012 Vol.21 (1): 17201-017201
[Abstract]
(1276)
[HTML 1 KB]
[PDF 933 KB]
(731)
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67102 |
Zhang Fa-Sheng (张发生), Li Xin-Ran (李欣然) |
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Research on high-voltage 4H–SiC P–i–N diode with planar edge junction termination techniques |
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Chin. Phys. B
2011 Vol.20 (6): 67102-067102
[Abstract]
(1403)
[HTML 1 KB]
[PDF 473 KB]
(1160)
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127204 |
Liu Li(刘莉), Yang Yin-Tang(杨银堂), and Ma Xiao-Hua(马晓华) |
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The electrical characteristics of a 4H–silicon carbide metal–insulator–semiconductor structure with Al2O3 as the gate dielectric |
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Chin. Phys. B
2011 Vol.20 (12): 127204-127204
[Abstract]
(1448)
[HTML 1 KB]
[PDF 359 KB]
(1192)
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97106 |
Wang Shou-Guo(王守国), Zhang Yi-Men(张义门), and Zhang Yu-Ming(张玉明) |
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Parameter analysis for gate metal–oxide–semiconductor structures of ion-implanted 4H silicon carbide metal–semiconductor field-effect transistors |
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Chin. Phys. B
2010 Vol.19 (9): 97106-097106
[Abstract]
(1588)
[HTML 0 KB]
[PDF 486 KB]
(629)
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36803 |
Wang Yue-Hu(王悦湖), Zhang Yi-Men(张义门), Zhang Yu-Ming(张玉明), Zhang Lin(张林), Jia Ren-Xu(贾仁需), and Chen Da(陈达) |
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SiC epitaxial layers grown by chemical vapour deposition and the fabrication of Schottky barrier diodes |
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Chin. Phys. B
2010 Vol.19 (3): 36803-036803
[Abstract]
(1583)
[HTML 1 KB]
[PDF 1651 KB]
(870)
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107101 |
Pu Hong-Bin(蒲红斌), Cao Lin(曹琳), Chen Zhi-Ming(陈治明), Ren Jie(仁杰), and Nan Ya-Gong(南雅公) |
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Modeling of 4H–SiC multi-floating-junction Schottky barrier diode |
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Chin. Phys. B
2010 Vol.19 (10): 107101-107101
[Abstract]
(1592)
[HTML 1 KB]
[PDF 280 KB]
(842)
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17204 |
Wang Shou-Guo(王守国), Zhang Yan(张岩), Zhang Yi-Men(张义门), and Zhang Yu-Ming(张玉明) |
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Ohmic contacts of 4H-SiC on ion-implantation layers |
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Chin. Phys. B
2010 Vol.19 (1): 17204-017204
[Abstract]
(1444)
[HTML 1 KB]
[PDF 322 KB]
(840)
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17203 |
Wang Shou-Guo(王守国), Zhang Yan(张岩), Zhang Yi-Men(张义门), and Zhang Yu-Ming(张玉明) |
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Characterization of ion-implanted 4H-SiC Schottky barrier diodes |
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Chin. Phys. B
2010 Vol.19 (1): 17203-017203
[Abstract]
(1386)
[HTML 1 KB]
[PDF 344 KB]
(962)
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3490 |
Zhang Lin(张林), Zhang Yi-Men(张义门), Zhang Yu-Ming(张玉明), Han Chao(韩超), and Ma Yong-Ji(马永吉) |
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High energy electron radiation effect on Ni/4H-SiC SBD and Ohmic contact |
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Chin. Phys. B
2009 Vol.18 (8): 3490-3494
[Abstract]
(1586)
[HTML 1 KB]
[PDF 1316 KB]
(1026)
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1931 |
Zhang Lin(张林), Zhang Yi-Men(张义门), Zhang Yu-Ming(张玉明), Han Chao(韩超), and Ma Yong-Ji(马永吉) |
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High energy electron radiation effect on Ni and Ti/4H-SiC Schottky barrier diode at room temperature |
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Chin. Phys. B
2009 Vol.18 (5): 1931-1934
[Abstract]
(1439)
[HTML 1 KB]
[PDF 287 KB]
(695)
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734 |
Liu Hong-Xia(刘红霞), Zhang He-Ming(张鹤鸣), Hu Hui-Yong(胡辉勇), and Song Jiu-Xu(宋久旭) |
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Structural feature and electronic property of an (8, 0) carbon--silicon carbide nanotube heterojunction |
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Chin. Phys. B
2009 Vol.18 (2): 734-737
[Abstract]
(1152)
[HTML 0 KB]
[PDF 540 KB]
(665)
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4456 |
Cao Quan-Jun(曹全君), Zhang Yi-Men(张义门), and Jia Li-Xin(贾立新) |
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Model and analysis of drain induced barrier lowering effect for 4H--SiC metal semiconductor field effect transistor |
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Chin. Phys. B
2009 Vol.18 (10): 4456-4459
[Abstract]
(1583)
[HTML 1 KB]
[PDF 400 KB]
(834)
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3459 |
Yang Yin-Tang(杨银堂), Han Ru(韩茹), and Wang-Ping(王平) |
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Raman analysis of defects in n-type 4H-SiC |
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Chin. Phys. B
2008 Vol.17 (9): 3459-3463
[Abstract]
(1566)
[HTML 1 KB]
[PDF 1309 KB]
(952)
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4622 |
Cao Quan-Jun (曹全君), Zhang Yi-Men (张义门), Zhang Yu-Ming (张玉明) |
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A new physics-based self-heating effect model for 4H-SiC MESFETs |
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Chin. Phys. B
2008 Vol.17 (12): 4622-4626
[Abstract]
(1483)
[HTML 1 KB]
[PDF 620 KB]
(645)
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1753 |
Guo Hui(郭辉), Zhang Yi-Men(张义门), Qiao Da-Yong(乔大勇), Sun Lei(孙磊), and Zhang Yu-Ming(张玉明) |
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The fabrication of nickel silicide ohmic contacts to n-type 6H-silicon carbide |
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Chin. Phys. B
2007 Vol.16 (6): 1753-1756
[Abstract]
(1344)
[HTML 1 KB]
[PDF 925 KB]
(1081)
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1276 |
Zhang Yi-Men(张义门), Zhou Yong-Hua(周拥华), and Zhang Yu-Ming(张玉明) |
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The simulation of temperature dependence of responsivity and response time for 6H-SiC UV photodetector |
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Chin. Phys. B
2007 Vol.16 (5): 1276-1279
[Abstract]
(1333)
[HTML 1 KB]
[PDF 417 KB]
(782)
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2142 |
Guo Hui(郭辉), Zhang Yi-Men(张义门), and Zhang Yu-Ming(张玉明) |
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Ti--Al based ohmic contacts to n-type 6H-SiC with P+ ion implantation |
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Chin. Phys. B
2006 Vol.15 (9): 2142-2145
[Abstract]
(1131)
[HTML 1 KB]
[PDF 262 KB]
(731)
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599 |
Gao Xin (高欣), Sun Guo-Sheng (孙国胜), Li Jin-Min (李晋闽), Zhang Yong-Xin (张永兴), Wang Lei (王雷), Zhao Wan-Shun (赵万顺), Zeng Yi-Ping (曾一平) |
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Effect of ion flux on recrystallization and resistance lowering in phosphorus-implanted (0001)-oriented 4H—SiC |
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Chin. Phys. B
2005 Vol.14 (3): 599-603
[Abstract]
(1234)
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389 |
Yang Lin-An (杨林安), Yu Chun-Li (于春利), Zhang Yi-Men (张义门), Zhang Yu-Ming (张玉明) |
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Low frequency effects of surface states on 4H-SiC metal-semiconductor field effect transistor |
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Chin. Phys. B
2003 Vol.12 (4): 389-393
[Abstract]
(1157)
[HTML 0 KB]
[PDF 233 KB]
(516)
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322 |
Wang Shou-Guo (王守国), Yang Lin-An (杨林安), Zhang Yi-Men (张义门), Zhang Yu-Ming (张玉明), Zhang Zhi-Yong (张志勇), Yan Jun-Feng (闫军锋) |
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Fabrication and characteristics of lateral Ti/4H-SiC Schottky barrier diodes |
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Chin. Phys. B
2003 Vol.12 (3): 322-324
[Abstract]
(1312)
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[PDF 205 KB]
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94 |
Wang Shou-Guo (王守国), Zhang Yi-Men (张义门), Zhang Yu-Ming (张玉明) |
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Parameter extraction for a Ti/4H-SiC Schottky diode |
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Chin. Phys. B
2003 Vol.12 (1): 94-96
[Abstract]
(1474)
[HTML 1 KB]
[PDF 216 KB]
(620)
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89 |
Wang Shou-Guo (王守国), Zhang Yi-Men (张义门), Zhang Yu-Ming (张玉明) |
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Theoretical investigation of incomplete ionization of dopants in uniform and ion-implanted 4H-SiC MESFETs |
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Chin. Phys. B
2003 Vol.12 (1): 89-93
[Abstract]
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